Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 125, Issue 10, Pages -Publisher
SPRINGER HEIDELBERG
DOI: 10.1007/s00339-019-2997-7
Keywords
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Funding
- National Natural Science Foundation of China [61975241, 51673214]
- National Key Research and Development Program of China [2017YFA0206600]
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The effect of interfacial charges between a semiconductor and a dielectric is absolutely crucial for high-performance phototransistors. In this paper, we report a novel deep-ultraviolet photodetector based on one-dimensional SnO2 nanowires (NWs) phototransistors with an ion-gel as the surrounding gate dielectric. The density of trapped carriers induced by light irradiation could be significantly amplified via the use of high-efficiency surrounding electrolyte coupling, thus, enhancing the photogating effect. The as-fabricated devices demonstrated an outstanding responsivity of 2 x 10(7) A/W under weak light illumination of 18.2 mu W/cm(2). Based on our systematic investigation of the threshold voltage shift and photodetection performance, we present a theoretical explanation for the high-performance SnO2 NWs phototransistors with the assistance of energy band analysis. The specific configuration and high-efficiency gating of the ion-gel electrolyte were particularly interesting from a photodetection point of view, providing new insights into the design and optimization of deep ultraviolet photodetection.
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