4.8 Article

Ultrafast Unbalanced Electron Distributions in Quasicrystalline 30° Twisted Bilayer Graphene

Journal

ACS NANO
Volume 13, Issue 10, Pages 11981-11987

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acsnano.9b06091

Keywords

graphene; interfaces; quasicrystal; valleytronics; ultrafast dynamics; optoelectronics

Funding

  1. Japan Society for the Promotion of Science (JSPS) [16H06361, 18H03874, 18K19011, 18K13498, 18H01146, 19H00659, 19H01818, 19H00651]
  2. JSPS KAKENHI [19H05826]
  3. Quantum Leap Flagship Program (Q-LEAP) from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) [JPMXS0118068681]
  4. Grants-in-Aid for Scientific Research [19H00651, 19H00659, 19H01818, 19H05826, 18H03874, 18K19011, 18K13498, 18H01146] Funding Source: KAKEN

Ask authors/readers for more resources

Ultrafast carrier dynamics in a graphene system are very important in terms of optoelectronic devices. Recently, a twisted bilayer graphene has been discovered that possesses interesting electronic properties owing to strong modifications in interlayer couplings. Thus, a better understanding of ultrafast carrier dynamics in a twisted bilayer graphene is highly desired. Here, we reveal the unbalanced electron distributions in a quasicrystalline 30 degrees twisted bilayer graphene (QCTBG), using time- and angle-resolved photoemission spectroscopy on the femtosecond time scale. We distinguish time-dependent electronic behavior between the upper- and lower-layer Dirac cones and gain insight into the dynamical properties of replica bands, which show characteristic signatures due to Umklapp scatterings. The experimental results are reproduced by solving a set of rate equations among the graphene layers and substrate. We find that the substrate buffer layer plays a key role in initial carrier injections to the upper and lower layers. Our results demonstrate that QCTBG can be a promising element for future devices.

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