Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 49, Pages 45885-45891Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b16876
Keywords
superlattice-like structure; interface; crystallization; Cr-Ge-Te; Ge-Te; multilevel phase-change memory
Funding
- National Key Research and Development Program of China [2017YFA0206101, 2017YFB0701703, 2017YFA0206104, 2017YFB0405601, 2018YFB0407500]
- National Natural Science Foundation of China [61874178, 61874129, 61904189]
- Science and Technology Council of Shanghai [17DZ2291300]
- Shanghai Sailing Program [19YF1456100]
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A multilevel phase-change memory device was successfully designed, which was fabricated using a Ge40Te60/Cr superlattice-like (SLL) structure. In the SLL films, a two-step phase change process is observed at elevated temperatures, which reveals the crystallization of Ge40Te60 (GT) and an interface-dominated formation of Cr2Ge2Te6 (CrGT). The bonding of Cr-Te and Ge-Ge is accompanied by the breaking of a Ge-Te bond, which is mainly in the Ge-rich GeTe4-nGen units. The formation of CrGT is related to the breaking apart of the edge-sharing octahedron in GT and Cr replacement at Ge sites. The crystalline GT acts as the crystallization precursors in the formation of the CrGT phase. The stable reversible two-step phase change can guarantee the reliability of the multilevel storage. The present work may shed light on the possible mechanism of the CrGT phase transition-based interfacial dynamic process. The designed multiple crystallization system demonstrates a potential for multilevel storage.
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