Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 46, Pages 43330-43336Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b13948
Keywords
tungsten diselenide; photodetector; laser doping; p-n junction; oxidation product
Funding
- National Natural Science Foundation of China [61774042, 61774040]
- Shanghai Municipal Natural Science Foundation [17ZR1446500, 17ZR1446600]
- First-Class Construction project of Fudan University [XM03170477]
- State Key Laboratory of ASIC & System, Fudan University [2018MS001]
- Shanghai Municipal Science and Technology Commission [18JC1410300]
- National Key R&D Program of China [2018YFA0703700]
- National Young 1000 Talent Plan of China
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Two-dimensional heterojunctions exhibit many unique features in nanoelectronic and optoelectronic devices. However, heterojunction engineering requires a complicated alignment process and some defects are inevitably introduced during material preparation. In this work, a laser scanning technique is used to construct a lateral WSe2 p-n junction. The laser-scanned region shows p-type behavior, and the adjacent region is electrically n-doped with a proper gate voltage. The laser-oxidized product WOx is found to be responsible for this p-type doping. After laser scanning, WSe2 displays a change from ambipolar to unipolar p-type property. A significant photo current emerges at the p-n junction. Therefore, a self-powered WSe2 photodetector can be fabricated based on this junction, which presents a large photoswitching ratio of 10(6), a high photoresponsivity of 800 mA W-1, and a short photoresponse time with long-term stability and reproducibility. Therefore, this selective laser-doping method is prospective in future electronic applications.
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