Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 11, Issue 43, Pages 39951-39960Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b13326
Keywords
oxygen vacancies; homojunction films; metal self-reducing method; in situ; photoelectrochemical property
Funding
- National Nature Science Foundation of China [51904356]
- Hunan Provincial Science and Technology Plan Project, China [2017TP1001]
- Project of Innovation-Driven Plan in Central South University [2017CX003]
- Shenzhen Science and Technology Innovation Project [630]
- State Key Laboratory of Powder Metallurgy in Central South University
- Thousand Youth Talents Plan of China
- Hundred Youth Talents Program of Hunan
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Defect engineering of semiconductors has been identified as an efficient route toward enhancing the photo electrochemical performances. There is a security threat in the traditional hydrogen annealing process. In this work, the oxygendefective nanofiber W03_x/W03 homojunction photoanode was in situ -synthesized via a novel metal self-reducing method. The as prepared photoanode exhibits 1.8 times higher solar water oxidation photocurrent density than that of the bare WO3 film at 1.2 V versus Ag/AgCl. The enhanced photoelectrochemical properties originate from the effective charge separation and injection, attributed to the stronger built-in electric field created by the oxygen -deficient homojunction. Importantly, this novel method is universally applicable to synthesize oxygen -deficient semiconductor materials, including films and powders.
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