Journal
ACS OMEGA
Volume 4, Issue 21, Pages 18961-18968Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsomega.9b01471
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Funding
- Guangdong Province's 2018-2019 Key R&D Program: Environmentally Friendly Quantum Dots Luminescent Materials [2019B010924001]
- National Key Research and Development Program of China [2016YFB0401702]
- National Natural Science Foundation of China [61674074, 61405089]
- Natural Science Foundation of Guangdong [2017B030306010]
- Shenzhen Peacock Team Project [KQTD2016030111203005]
- Shenzhen Innovation Project [JCYJ20160301113356947, JCYJ20160301113537474]
- Doctoral Fund of Ministry of Education of China [2017M610484, 2017M612497]
- National Basic Research Program of China (973 Program) [2014CB643801]
- National Nature Science Foundation of China [51502020]
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Traditionally, ZnS or ZnSe is chosen as the shell material for InP quantum dots (QDs). However, for green or blue InP QDs, the ZnSe shell will form a type-II structure resulting in a redshift of the emission spectrum. Although the band gap of ZnS is wider, its lattice mismatch with InP is larger (similar to 7.7%), resulting in more defect states and lowered quantum yield (QY). To overcome the above problems, we introduced the intermediate ZnMnS layer in InP/ZnMnS/ZnS QDs. The wide band gap of the intermediate layer (3.7 eV) can confine the electrons and holes in the core completely, and the formation of the type-II structure is avoided. As a result, green InP-based QDs with QY up to 80% were obtained. By adjusting the halogen ratios of the ZnX2 precursor, the minimum and maximum emission peaks are 470 and 620 nm, respectively, covering the whole visible range. Finally, after optimizing the coating shell process, the maximum external quantum efficiency of QD light-emitting diodes fabricated from this InP-based green light QDs can reach 2.7%.
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