Journal
ELECTRONICS
Volume 8, Issue 10, Pages -Publisher
MDPI
DOI: 10.3390/electronics8101099
Keywords
nitrogen incorporation; CuON; p-type oxide semiconductor; reactive sputtering; thin-film transistors
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Education [NRF-2019R1I1A2A01064153]
- MOTIE (Ministry of Trade, Industry Energy) [10051403]
- KDRC (Korea Display Research Corporation)
- Korea Evaluation Institute of Industrial Technology (KEIT) [10051403] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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In the present study, the effects of nitrogen incorporation on the transition of a p-type copper oxide semiconductor are investigated. The properties of sputtered copper oxide and nitrogen-incorporated copper oxide are evaluated and compared at various nitrogen gas flow rates. The results indicate that the addition of nitrogen results in an increased optical bandgap, accompanied by significantly reduced tail states compared to pristine copper oxide. In addition, X-ray diffraction and X-ray photoelectron spectroscopy reveal that the incorporation of nitrogen stimulates the transition from copper (II) oxide to copper (I) oxide.
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