Journal
ADVANCED MATERIALS TECHNOLOGIES
Volume 4, Issue 10, Pages -Publisher
WILEY
DOI: 10.1002/admt.201900422
Keywords
fluorographene; long-term potentiation; low-damage fluorination; spike timing dependent plasticity; synaptic transistors
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Funding
- Ministry of Science and Technology, Taiwan [MOST 108-2218-E-182-002, MOST 108-2622-8-182-001-TS1]
- Chang Gung Memorial Hospital, Taiwan [CMRPD2G0102]
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Exploring brain-inspired synaptic devices has recently become a new focus of research in nanoelectronic communities. In this emerging field, incorporating 2D materials into three-terminal synaptic transistors has brought various advantages. However, achieving a stable and long-term weight-modulation in these synaptic transistors, which are typically based on interface charge storage, is still a challenge due to the nature of their spontaneous relaxation. The application of an atomically thin fluorographene layer into the synaptic junction region suppresses this issue and improves the efficiency, tunability, and symmetry of the synaptic plasticity as well as establishing a stable weight-regulation paradigm. These unique properties can be attributed to the dipolar rotation of C-F in fluorographene. To obtain a better physical understanding, a vacancy-dependent C-F dipolar rotation model is proposed and supported by hysteresis analysis and density functional theory calculations. As proposed and demonstrated, the unique fluorographene-based synaptic transistor may be a promising building block for constructing efficient neuromorphic computing hardware.
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