Journal
SCIENCE ADVANCES
Volume 5, Issue 8, Pages -Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.aaw8904
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Funding
- National Key Research and Development Program of China [2017YFA0206200, 2018YFB0407600, 2016YFA0300802, 2017YFA0206302]
- National Natural Science Foundation of China (NSFC) [11874409, 11804380, 11434014, 51831012]
- NSFC-Science Foundation Ireland (SFI) Partnership Programme [51861135104]
- 1000 Youth Talents Program
- NSFC [61734001, 11834017, 51572289]
- Strategic Priority Research Program (B) of CAS [XDB30000000]
- Key Research Program of Frontier Sciences of CAS [QYZDB-SSW-SLH004]
- National Key R&D Program of China [2016YFA0300904]
- Institute of Physics, Chinese Academy of Sciences through the International Young Scientist Fellowship [2018001]
- King Abdullah University of Science and Technology (KAUST), Office of Sponsored Research (OSR) [OSR-2017-CRG6-3427]
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The recent discovery of ferromagnetism in two-dimensional (2D) van der Waals (vdW) materials holds promises for spintronic devices with exceptional properties. However, to use 2D vdW magnets for building spintronic nanodevices such as magnetic memories, key challenges remain in terms of effectively switching the magnetization from one state to the other electrically. Here, we devise a bilayer structure of Fe3GeTe2/Pt, in which the magnetization of few-layered Fe3GeTe2 can be effectively switched by the spin-orbit torques (SOTs) originated from the current flowing in the Pt layer. The effective magnetic fields corresponding to the SOTs are further quantitatively characterized using harmonic measurements. Our demonstration of the SOT-driven magnetization switching in a 2D vdW magnet could pave the way for implementing low-dimensional materials in the next-generation spintronic applications.
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