Journal
MATERIALS RESEARCH EXPRESS
Volume 6, Issue 11, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1591/ab4394
Keywords
ZnO; intrinsic defects; annealing atmosphere; photoluminescence
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Funding
- National Natural Science Foundation of China [51665028]
- Natural Science Foundation of Gansu Province, China [1506RJZA107]
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The ZnO thin-film was prepared via a sol-gel method, followed by an annealing process in the different atmospheres (O-2, Ar and H-2, respectively), and the intrinsic defects related structural and optical properties were investigated. An enhancement of the interstitial Zn (Zn-i) and O vacancy (V-O) defect concentrations was achieved for the samples annealed in an Ar and H-2 atmospheres, which was identified by the XRD and photoluminescence (PL) measurements. And an improvement of the interstitial O (O-i), Zn vacancy (V-zn) and anti-site O (O-Zn) defect concentrations was observed for the sample annealed in an oxygen-rich condition. Furthermore, some defects-related PL characteristics were also examined, and the clearly identifications were shown as below: Zn-i (435 nm), VO (457 nm), O-Zn (500 nm), O-i (562 nm), V-Zn (655 nm), and the electron transition from the ionized Zn-i to O-i (620 nm).
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