4.7 Article

Semicoherent oxide heterointerfaces: Structure, properties, and implications

Journal

APL MATERIALS
Volume 7, Issue 10, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.5121027

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Funding

  1. U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences, and Engineering Division
  2. RIT College of Science Startup Funds
  3. Center for Integrated Nanotechnologies, an Office of Science User Facility
  4. National Nuclear Security Administration of U.S. Department of Energy [89233218CNA000001]

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In the quest for enhanced functionality of all sorts, nanostructured materials are becoming ever more common. This is particularly true of oxide/oxide heterostructures in which the high density of interfaces has been implicated in enhanced properties and used to engineer strain in oxide composite structures. These interfaces are often characterized by a network of misfit dislocations that relieve the lattice mismatch strain between the two materials, and these dislocations themselves are often suggested as the source of either enhancements or degradation of properties. Despite the importance and pervasiveness of misfit dislocations, however, there is still much that is unknown about their structure and properties, particularly in oxide/oxide heterostructures. Here, we give a perspective on the importance of these dislocation networks and the need to interrogate their impact on functionality. (C) 2019 Author(s).

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