Related references
Note: Only part of the references are listed.Room temperature solid-state quantum emitters in the telecom range
Yu Zhou et al.
SCIENCE ADVANCES (2018)
Nanoassembly of quantum emitters in hexagonal boron nitride and gold nanospheres
Minh Nguyen et al.
NANOSCALE (2018)
Ultraclean Single Photon Emission from a GaN Quantum Dot
Munetaka Arita et al.
NANO LETTERS (2017)
A review of gallium nitride LEDs for multigigabit-per-second visible light data communications
Sujan Rajbhandari et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2017)
Gallium nitride grown by molecular beam epitaxy at low temperatures
A. M. Jeffries et al.
THIN SOLID FILMS (2017)
Spectral properties of single photons from quantum emitters
Philipp Mueller et al.
PHYSICAL REVIEW A (2017)
Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride
Amanuel M. Berhane et al.
ADVANCED MATERIALS (2017)
Quantum emission from hexagonal boron nitride monolayers
Toan Trong Tran et al.
NATURE NANOTECHNOLOGY (2016)
Robust Multicolor Single Photon Emission from Point Defects in Hexagonal Boron Nitride
Toan Trong Tran et al.
ACS NANO (2016)
Near-optimal single-photon sources in the solid state
N. Somaschi et al.
NATURE PHOTONICS (2016)
GaN-based light-emitting diodes on various substrates: a critical review
Guoqiang Li et al.
REPORTS ON PROGRESS IN PHYSICS (2016)
A comparative study on the properties of c-plane and a-plane GaN epitaxial films grown on sapphire substrates by pulsed laser deposition
Wenliang Wang et al.
VACUUM (2016)
Electroluminescence from Localized Defects in Zinc Oxide: Toward Electrically Driven Single Photon Sources at Room Temperature
Sumin Choi et al.
ACS APPLIED MATERIALS & INTERFACES (2015)
Linear Optical Quantum Metrology with Single Photons: Exploiting Spontaneously Generated Entanglement to Beat the Shot-Noise Limit
Keith R. Motes et al.
PHYSICAL REVIEW LETTERS (2015)
Room Temperature Quantum Emission from Cubic Silicon Carbide Nanoparticles
Stefania Castelletto et al.
ACS NANO (2014)
Single photon emission from ZnO nanoparticles
Sumin Choi et al.
APPLIED PHYSICS LETTERS (2014)
Evaluation of growth methods for the heteroepitaxy of non-polar (11(2)over-bar0) GAN on sapphire by MOVPE
F. Oehler et al.
JOURNAL OF CRYSTAL GROWTH (2014)
Defect Reduction in Semi-Polar (11(2)over-bar2) Gallium Nitride Grown Using Epitaxial Lateral Overgrowth
Tongtong Zhu et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Mg Doping Affects Dislocation Core Structures in GaN
S. K. Rhode et al.
PHYSICAL REVIEW LETTERS (2013)
The nitrogen-vacancy colour centre in diamond
Marcus W. Doherty et al.
PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS (2013)
Bright solid-state sources of indistinguishable single photons
O. Gazzano et al.
NATURE COMMUNICATIONS (2013)
Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures
F. C. -P. Massabuau et al.
APPLIED PHYSICS LETTERS (2012)
Influence of Controlled Growth Rate on Tilt Mosaic Microstructures of Nonpolar a-plane GaN Epilayers Grown on r-plane Sapphire
Yong Seok Lee et al.
ELECTRONIC MATERIALS LETTERS (2012)
Unintentional doping in GaN
Tongtong Zhu et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS (2012)
Semipolar GaN grown on foreign substrates: a review
F. Scholz
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process
A. Y. Polyakov et al.
JOURNAL OF APPLIED PHYSICS (2011)
Single photon emission from silicon-vacancy colour centres in chemical vapour deposition nano-diamonds on iridium
Elke Neu et al.
NEW JOURNAL OF PHYSICS (2011)
Diamond-based single-photon emitters
I. Aharonovich et al.
REPORTS ON PROGRESS IN PHYSICS (2011)
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
Hisashi Masui et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2010)
Unidirectional Emission of a Quantum Dot Coupled to a Nanoantenna
Alberto G. Curto et al.
SCIENCE (2010)
Constructing Relational Databases to Study Life Histories on Your PC or Mac
Johann Peter Murmann
HISTORICAL METHODS (2010)
Defect reduction in (1122) semipolar GaN grown on m-plane sapphire using ScN interlayers
C. F. Johnston et al.
APPLIED PHYSICS LETTERS (2009)
Two-step growth of high quality GaN using V/III ratio variation in the initial growth stage
S Kim et al.
JOURNAL OF CRYSTAL GROWTH (2004)
Dislocation related issues in the degradation of GaN-based laser diodes
S Tomiya et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2004)
Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope
N Yamamoto et al.
JOURNAL OF APPLIED PHYSICS (2003)
Growth and characteristics of Fe-doped GaN
S Heikman et al.
JOURNAL OF CRYSTAL GROWTH (2003)
Substrates for gallium nitride epitaxy
L Liu et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2002)
Magnetic resonance studies of Mg-doped GaN epitaxial layers grown by organometallic chemical vapor deposition
ER Glaser et al.
PHYSICAL REVIEW B (2002)
Heavy doping effects in Mg-doped GaN
P Kozodoy et al.
JOURNAL OF APPLIED PHYSICS (2000)