Journal
ADVANCED SCIENCE
Volume 6, Issue 21, Pages -Publisher
WILEY
DOI: 10.1002/advs.201901213
Keywords
charge transport; hysteresis; interfacial binding; perovskite solar cells; titanium dioxide
Categories
Funding
- National Key Research and Development Program of China [2016YFA0202400]
- 111 Project [B16016]
- National Natural Science Foundation of China [51702096, U1705256]
- Major/Innovative Program of Development Foundation of Hefei Center for Physical Science and Technology [2016FXZY003]
- Fundamental Research Funds for the Central Universities [2018QN063]
- Beijing Key Laboratory of Novel Thin-Film Solar Cells
- Beijing Key Laboratory of Energy Safety and Clean Utilization
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Perovskite solar cells (PSCs) have witnessed astonishing improvement in power conversion efficiency (PCE), more recently, with advances in long-term stability and scalable fabrication. However, the presence of an anomalous hysteresis behavior in the current density-voltage characteristic of these devices remains a key obstacle on the road to commercialization. Herein, sol-gel-processed mesoporous boron-doped TiO2 (B-TiO2) is demonstrated as an improved electron transport layer (ETL) for PSCs for the reduction of hysteresis. The incorporation of boron dopant in TiO2 ETL not only reduces the hysteresis behavior but also improves PCE of the perovskite device. The simultaneous improvements are mainly ascribed to the following two reasons. First, the substitution of under-coordinated titanium atom by boron species effectively passivates oxygen vacancy defects in the TiO2 ETL, leading to increased electron mobility and conductivity, thereby greatly facilitating electron transport. Second, the boron dopant upshifts the conduction band edge of TiO2, resulting in more efficient electron extraction with suppressed charge recombination. Consequently, a methylammonium lead iodide (MAPbI(3)) photovoltaic device based on B-TiO2 ETL achieves a higher efficiency of 20.51% than the 19.06% of the pure TiO2 ETL based device, and the hysteresis is reduced from 0.13% to 0.01% with the B-TiO2 based device showing negligible hysteresis behavior.
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