Related references
Note: Only part of the references are listed.Analysis of admittance measurements of MOS capacitors on CVD grown bilayer MoS2
Abhinav Gaur et al.
2D MATERIALS (2019)
High quality gate dielectric/MoS2 interfaces probed by the conductance method
Durjoy Dev et al.
APPLIED PHYSICS LETTERS (2018)
Two-dimensional electronic transport and surface electron accumulation in MoS2
M. D. Siao et al.
NATURE COMMUNICATIONS (2018)
Accumulation-Mode Two-Dimensional Field-Effect Transistor: Operation Mechanism and Thickness Scaling Rule
Nan Fang et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Experimental detection of active defects in few layers MoS2 through random telegraphic signals analysis observed in its FET characteristics
Nan Fang et al.
2D MATERIALS (2017)
Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition
S. Kurabayashia et al.
NANOSCALE (2017)
Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric
Pengkun Xia et al.
SCIENTIFIC REPORTS (2017)
Probing Interface Defects in Top-Gated MoS2 Transistors with Impedance Spectroscopy
Peng Zhao et al.
ACS APPLIED MATERIALS & INTERFACES (2017)
Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals
Seonyoung Park et al.
ACS APPLIED MATERIALS & INTERFACES (2016)
Charge transport and mobility engineering in two-dimensional transition metal chalcogenide semiconductors
Song-Lin Li et al.
CHEMICAL SOCIETY REVIEWS (2016)
2D Semiconductor FETs-Projections and Design for Sub-10 nm VLSI
Wei Cao et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Fabrication of high-k/metal-gate MoS2 field-effect transistor by device isolation process utilizing Ar-plasma etching
Naruki Ninomiya et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
Xu Cui et al.
NATURE NANOTECHNOLOGY (2015)
Probing the electron states and metal-insulator transition mechanisms in molybdenum disulphide vertical heterostructures
Xiaolong Chen et al.
NATURE COMMUNICATIONS (2015)
Interface Engineering for High-Performance Top-Gated MoS2 Field-Effect Transistors
Xuming Zou et al.
ADVANCED MATERIALS (2014)
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
Wenjuan Zhu et al.
NATURE COMMUNICATIONS (2014)
Performance Optimization Study of FinFETs Considering Parasitic Capacitance and Resistance
TaeYoon An et al.
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE (2014)
Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
Song-Lin Li et al.
NANO LETTERS (2013)
MoS2 Dual-Gate MOSFET With Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
Han Liu et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Effects of strain on band structure and effective masses in MoS2
H. Peelaers et al.
PHYSICAL REVIEW B (2012)
Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2
Tawinan Cheiwchanchamnangij et al.
PHYSICAL REVIEW B (2012)
Mobility extraction in SOI MOSFETs with sub 1 nm body thickness
M. Schmidt et al.
SOLID-STATE ELECTRONICS (2009)
Siticon device scaling to the sub-10-nm regime
M Leong et al.
SCIENCE (2004)
Share Paper
