Journal
2D MATERIALS
Volume 7, Issue 1, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/2053-1583/ab42c0
Keywords
capacitance-voltage measurement; accumulation capacitance; quantum-mechanical effect; subband
Categories
Funding
- JSPS KAKENHI
- Canon Foundation
- JSPS Core-to-Core Program, A. Advanced Research Networks
- JSPS A3 Foresight Program
- JSPS KAKENHI, Japan [JP16H04343, JP19H00755, 19K21956]
- Grants-in-Aid for Scientific Research [19K21956] Funding Source: KAKEN
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Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the typical thickness of similar to 5 nm for Si-on-insulator (SOI), the advantage of the ultimate thickness limit of monolayer for the device performance has not been fully proved yet, especially for the on-state at the accumulation region. Here, we present much stronger quantum-mechanical effect at the accumulation region based on the C-V analysis for top-gate MoS2 FETs. The self-consistent calculation elucidated that the electrons are confined in the monolayer thickness, unlike in the triangle potential formed by the electric field for SOI, the gate-channel capacitance is ideally maximized to the gate insulator capacitance since the capacitive contribution of the channel can be neglected due to the negligible channel thickness. This quantum-mechanical effect agreed well with the experimental results. Therefore, monolayer 2D channels are suggested to be used to enhance the on-current as well as the gate modulation ability.
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