4.2 Article

Microwave plasma and rapid thermal processing of indium-tin oxide thin films for enhancing their performance as transparent electrodes

Journal

JOURNAL OF PHOTONICS FOR ENERGY
Volume 9, Issue 3, Pages -

Publisher

SPIE-SOC PHOTO-OPTICAL INSTRUMENTATION ENGINEERS
DOI: 10.1117/1.JPE.9.034001

Keywords

indium-tin oxide; microwave plasma annealing; rapid thermal processing; surface morphology and optoelectronic properties

Funding

  1. Egyptian Ministry of Higher Education Missions section under the Egyptian joint supervision grant at UAM Spain

Ask authors/readers for more resources

Indium-tin oxide (ITO) is widely used as a transparent electrode for optoelectronic devices given its large transparency and high conductivity. However, the particular properties of this material greatly depend on the overall fabrication process. We report on the effect of four different postfabrication processes on ITO thin films grown by electron beam evaporation. More specifically, the effect on the overall properties of the evaporated ITO thin films of microwave plasma annealing, rapid thermal processing, and the two processes combined were analyzed. In particular, the morphological, chemical, optical, and electrical properties of the annealed ITO thin films were studied. The experimental results show that the ITO thin films can be turned from opaque to transparent, and their conductivity can be improved by one order of magnitude depending on the particular postfabrication process. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)

Authors

I am an author on this paper
Click your name to claim this paper and add it to your profile.

Reviews

Primary Rating

4.2
Not enough ratings

Secondary Ratings

Novelty
-
Significance
-
Scientific rigor
-
Rate this paper

Recommended

No Data Available
No Data Available