Journal
SMALL
Volume 15, Issue 41, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.201902770
Keywords
diodes; MOSFETs; reconfigurable devices; tunneling field-effect transistors (TFET); WSe2
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Funding
- NEWLIMITS, a center in nCORE, a Semiconductor Research Corporation (SRC) program - NIST [70NANB17H041]
- Center for Low Energy Systems Technology (LEAST), one of the six SRC STARnet Centers - MARCO
- DARPA
- National Science Foundation [ACI-1548562]
- U.S. National Science Foundation [EEC-1227110, EEC-0228390, EEC-0634750, OCI-0438246, OCI-0721680]
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In this paper, electrostatically configurable 2D tungsten diselenide (WSe2) electronic devices are demonstrated. Utilizing a novel triple-gate design, a WSe2 device is able to operate as a tunneling field-effect transistor (TFET), a metal-oxide-semiconductor field-effect transistor (MOSFET) as well as a diode, by electrostatically tuning the channel doping to the desired profile. The implementation of scaled gate dielectric and gate electrode spacing enables higher band-to-band tunneling transmission with the best observed subthreshold swing (SS) among all reported homojunction TFETs on 2D materials. Self-consistent full-band atomistic quantum transport simulations quantitatively agree with electrical measurements of both the MOSFET and TFET and suggest that scaling gate oxide below 3 nm is necessary to achieve sub-60 mV dec(-1) SS, while further improvement can be obtained by optimizing the spacers. Diode operation is also demonstrated with the best ideality factor of 1.5, owing to the enhanced electrostatic control compared to previous reports. This research sheds light on the potential of utilizing electrostatic doping scheme for low-power electronics and opens a path toward novel designs of field programmable mixed analog/digital circuitry for reconfigurable computing.
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