Journal
SEMICONDUCTORS
Volume 53, Issue 9, Pages 1158-1163Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782619090045
Keywords
thermoelectricity; Si1-xGex solid solution; doping; clusters; Sb; plasma sintering
Categories
Funding
- Russian Science Foundation [17-79-20173]
- Russian Science Foundation [17-79-20173] Funding Source: Russian Science Foundation
Ask authors/readers for more resources
The results of investigation of thermoelectric materials fabricated by spark plasma sintering and based on Si1 -xGex solid solutions doped with Sb to a concentration of 0-5 at % are presented. It was found that, at Sb concentration below 1 at %, efficient doping of the solid solution was carried out during the sintering process, which allowed us to form a thermoelectric material with a relatively high thermoelectric figure of merit. An increase in the concentration of antimony in the range of 1-5 at % led to a change in the mechanism of doping, which resulted in an increase in the resistance of materials and the segregation of Sb into large clusters. For such materials, a significant decrease in the Seebeck coefficient and thermoelectric figure of merit was noted. The highest obtained thermoelectric figure of merit (ZT) with Sb doping was 0.32 at 350 degrees C, which is comparable with known analogues for the GexSi1 -x solid solution.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available