Journal
PROGRESS IN PHOTOVOLTAICS
Volume 29, Issue 11, Pages 1158-1164Publisher
WILEY
DOI: 10.1002/pip.3184
Keywords
atom probe tomography; crystallographic defects; defect passivation; hydrogen; silicon
Funding
- EPSRC [EP/M024911/1]
- EPSRC [1801718, EP/N010868/1, EP/M024911/1] Funding Source: UKRI
Ask authors/readers for more resources
A novel characterization technique combining TKD, APT, and isotopic substitution enables the clear detection and quantification of hydrogen atoms present at crystallographic defects in mc-Si.
Hydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc-Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these different behaviours, and how superior passivation might be achieved, a method is required for the direct observation of hydrogen at these defects. Here, we present a novel characterisation technique based on a combination of transmission Kikuchi diffraction (TKD), atom probe tomography (APT), and isotopic substitution that enables unambiguous detection and quantification of hydrogen atoms present at crystallographic defects in mc-Si.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available