Related references
Note: Only part of the references are listed.Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN
Masamichi Akazawa et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams
Akira Uedono et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2018)
880 V/2.7 m Omega . cm(2) MIS Gate Trench CAVET on Bulk GaN Substrates
Dong Ji et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Improved Dynamic RON of GaN Vertical Trench MOSFETs (OG-FETs) Using TMAH Wet Etch
Dong Ji et al.
IEEE ELECTRON DEVICE LETTERS (2018)
Electrically active point defects in Mg implanted n-type GaN grown by metal-organic chemical vapor deposition
G. Alfieri et al.
JOURNAL OF APPLIED PHYSICS (2018)
The 2018 GaN power electronics roadmap
H. Amano et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2018)
Detection of deep-level defects and reduced carrier concentration in Mg-ion-implanted GaN before high-temperature annealing
Masamichi Akazawa et al.
AIP ADVANCES (2018)
P-type doping of GaN(000(1)over-bar) by magnesium ion implantation
Tetsuo Narita et al.
APPLIED PHYSICS EXPRESS (2017)
Current linearity and operation stability in Al2O3-gate AlGaN/GaN MOS high electron mobility transistors
Kenya Nishiguchi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2017)
High carrier activation of Mg ion-implanted GaN by conventional rapid thermal annealing
Takaki Niwa et al.
APPLIED PHYSICS EXPRESS (2017)
Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates
Shota Kaneki et al.
APPLIED PHYSICS LETTERS (2016)
Improvements in the Annealing of Mg Ion Implanted GaN and Related Devices
Travis J. Anderson et al.
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING (2016)
1.8mΩ.cm2 vertical GaN-based trench metal-oxide-semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
Tohru Oka et al.
APPLIED PHYSICS EXPRESS (2015)
Characterization of an Mg-implanted GaN p-i-n diode
Jordan D. Greenlee et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2015)
Vacancy-type defects and their annealing behaviors in Mg-implanted GaN studied by a monoenergetic positron beam
Akira Uedono et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2015)
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
T. J. Anderson et al.
ELECTRONICS LETTERS (2014)
Recent progress of GaN power devices for automotive applications
Tetsu Kachi
JAPANESE JOURNAL OF APPLIED PHYSICS (2014)
Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies
Unhi Honda et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2013)
Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy
Paulina Kamyczek et al.
MATERIALS SCIENCE-POLAND (2013)
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
B. N. Feigelson et al.
JOURNAL OF CRYSTAL GROWTH (2012)
Identification of the Nitrogen Split Interstitial (N-N)N in GaN
H. J. von Bardeleben et al.
PHYSICAL REVIEW LETTERS (2012)
Interface models and processing technologies for surface passivation and interface control in III-V semiconductor nanoelectronics
H. Hasegawa et al.
APPLIED SURFACE SCIENCE (2008)
DLTS study of n-type GaN grown by MOCVD on GaN substrates
Y. Tokuda et al.
SUPERLATTICES AND MICROSTRUCTURES (2006)
Traps in AlGaN/GaN/SiC heterostructures studied by deep level transient spectroscopy
ZQ Fang et al.
APPLIED PHYSICS LETTERS (2005)
Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition
ZQ Fang et al.
APPLIED PHYSICS LETTERS (2003)