Enhancement of the optoelectronic performance of p-down multiquantum well N-GaN light-emitting diodes

We present the numerical effect of the polarity of the built-in field on the GaN-based light-emitting diodes (LEDs). The results show that, in comparison to the Ga-polar device, the p-down N-polar device shows significant improvement in electronic and optical characteristics. In N-LED, the turn-on voltage, internal quantum efficiency and radiative recombination rate is improved by 6%, three times at 100 A cm(-2 )and 194%, respectively. It is shown that the effective barrier heights and energy band offsets are the governing reason behind the significant improvement in N-polar devices.