Comparison of electrical properties of MS and MPS type diode in respect of (In2O3-PVP) interlayer

In this study, the electronic properties of Au/n-Si (MS) and Au/(In2O3-PVP)/n-Si (MPS) diode have been investigated to see the effects of an organic (In2O3-PVP) interlayer by utilizing voltage-dependent current (I) and capacitance (C) measurements. The organic indium oxide (In2O3) nanostructures were characterized by XRD, SEM and UV-Vis spectrophotometer techniques. The rectifying ratio (RR) of the fabricated MS and MPS diode at +/- 3 V was found as 1.89 x 10(3) and 6.18 x 10(3), respectively. The electronic parameters for instance the ideality factor (n) and barrier height (Phi(Bo)) of MS and MPS diode were found as 1.94 and 2.20, and 0.73 eV and 0.76 eV, respectively. Additionally, series resistance (R-s), n, and Phi(Bo) values were calculated by using Cheung's functions as second way to see the used calculation method and voltage effects on them. Therefore, the Rs and Phi(Bo) values were determined from both the Norde method and C-V characteristics.