Journal
OPTICS LETTERS
Volume 44, Issue 18, Pages 4566-4569Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.44.004566
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Funding
- Innovation and Technology CommissionHong Kong [ITS/273/16FP]
- Research Grants Council, University Grants Committee (RGC, UGC) [16212115, 614813]
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Directly grown quantum dot (QD) lasers on silicon are appealing for monolithic integration of photonic circuits from a technoeconomic perspective. In this Letter, we report miniaturization of these Si-based lasers employing high-quality whispering-gallery mode microresonators. Based on previously developed InAs/InAlGaAs QDs on the complementary metal-oxide-semiconductor-standard (001) Si platform and optimized device implementation techniques, on-chip electrically pumped InP-based QD microring lasers (MRLs) on Si are successfully realized for the first time. Room-temperature pulsed lasing in the 1.5 mu m wavelength band, with a threshold of 50 mA, is measured for 50-mu m-diameter MRLs. Lasing up to 70 degrees C is achieved with a characteristic temperature of 51.5 K. (C) 2019 Optical Society of America
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