Development of a technology for the fabrication of Low-Gain Avalanche Diodes at BNL

Low-Gain Avalanche Detectors are gathering interest in the High-Energy Physics community thanks to their fast-timing and radiation-hardness properties. One example of this includes plans to exploit timing detectors for the upgrades of the ATLAS and CMS detectors at the High Luminosity LHC. This new technology has also raised interest for its possible application for photon detection in medical physics, imaging and photon science. The main characteristic of this type of device is a thin and highly-doped layer that provides internal and moderate gain, in the order of 10-20, that enhances the signal amplitude. Furthermore the thin substrate, of only few tens of microns, allows for fast carrier collection. This paper offers details on the fabrication technology, specifically developed at Brookhaven National Laboratory for the detection of minimum ionizing particles. The static electrical characterization and the gain measurements on prototypes will be also reported.