Related references
Note: Only part of the references are listed.Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures
Jeong-Tak Oh et al.
OPTICS EXPRESS (2018)
A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire
Yosuke Nagasawa et al.
APPLIED SCIENCES-BASEL (2018)
Optical cross-talk reduction in a quantum-dot-based full-color micro-light-emitting-diode display by a lithographic-fabricated photoresist mold
Huang-Yu Lin et al.
PHOTONICS RESEARCH (2017)
Emissive displays with transfer-printed assemblies of 8 μm x 15 μm inorganic light-emitting diodes
Christopher A. Bower et al.
PHOTONICS RESEARCH (2017)
GaN-based emissive microdisplays: A very promising technology for compact, ultra-high brightness display systems
Francois Templier
Journal of the Society for Information Display (2016)
Active-Matrix GaN Micro Light-Emitting Diode Display With Unprecedented Brightness
Johannes Herrnsdorf et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2015)
Resonant-enhanced full-color emission of quantum-dot-based micro LED display technology
Hau-Vei Han et al.
OPTICS EXPRESS (2015)
Size-dependent capacitance study on InGaN-based micro-light-emitting diodes
Wei Yang et al.
JOURNAL OF APPLIED PHYSICS (2014)
Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells
Huining Wang et al.
OPTICS EXPRESS (2012)
A thermal analysis of the operation of microscale, inorganic light-emitting diodes
Chaofeng Lu et al.
PROCEEDINGS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES (2012)
Voltage modulated electro-luminescence spectroscopy to understand negative capacitance and the role of sub-bandgap states in light emitting devices
Kanika Bansal et al.
JOURNAL OF APPLIED PHYSICS (2011)
Full-colour quantum dot displays fabricated by transfer printing
Tae-Ho Kim et al.
NATURE PHOTONICS (2011)
Size-dependent light output, spectral shift, and self-heating of 400 nm InGaN light-emitting diodes
Zheng Gong et al.
JOURNAL OF APPLIED PHYSICS (2010)
CdSe quantum dots co-sensitized TiO2 photoelectrodes: particle size dependent properties
K. Prabakar et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
The origin of the high diode-ideality factors in GaInN/GaN multiple quantum well light-emitting diodes
Di Zhu et al.
APPLIED PHYSICS LETTERS (2009)
Experimental analysis and theoretical model for anomalously high ideality factors (n>>2.0) in AlGaN/GaN p-n junction diodes
JM Shah et al.
JOURNAL OF APPLIED PHYSICS (2003)
Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes
XA Cao et al.
APPLIED PHYSICS LETTERS (2003)
Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures
J Bai et al.
JOURNAL OF APPLIED PHYSICS (2000)