Combustion synthesis of electrospun LaIno nanofiber for high-performance field-effect transistors

One-dimensional semiconductor nanofibers are regarded as ideal materials for electronics due to their distinctive morphology and characteristics. In this work, La-doped indium oxide (LaIno) nanofibers are fabricated as the channel layer to reduce O vacancies and the density of interface trap states; this is clearly confirmed by investigating the stability under positive bias stress and the capacitance-voltage for field-effect transistors (FETs). The In2O3 nanofiber FETs optimized by doping with 5 mol% La exhibit excellent electrical performance with a mobility of 4.95 cm(2) V-1 s(-1) and an on/off current ratio of 1.1 x 10(8). In order to further enhance the electrical performance of LaInO nanofiber FhTs, ZrAlOx, film, which has a high dielectric constant, is employed as the insulator for the LaInO nanofiber FETs. The LaInO nanofiber FhTs with ZrAlOx insulator have a high mobility of 13.5 cm(2) V-1 s(-1). These findings clearly indicate the great promise of La-doped In2O3 nanofibers in future one-dimensional nanoelectronics.