Journal
MICROELECTRONIC ENGINEERING
Volume 216, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.mee.2019.111099
Keywords
MOS device; Resistive switching; ZrxHF1-x O-2 thin film; XPS; LRS; HRS; Oxygen vacancies; Conducting filament
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Funding
- Department of Atomic Energy (DAE), Government of India
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The effect of Zr content on resistive switching properties of ZrxHf1-xO2-based metal-oxide-semiconductor (MOS) devices has been studied. The electrical characteristics and x-ray photoelectron spectroscopy studies reveal that the resistive switching property performs its best when the Zr content in the film is 9.11%. The XPS data reveals presence of non-lattice oxygen in all the devices. The differential scanning calorimetry (DSC) study shows an endotherm peak at similar to 145.9 degrees C only for the sample at a particular Zr content in the ZrxHf1-xO2 film indicating release of lattice oxygen. Thus, besides presence of non-lattice oxygen in the film, further generation of hole trap density in the form of lattice oxygen release is required to achieve a better low resistance state (LRS) and the same is reflected in the double logarithmic plot of I - V. It is believed that some sort of microstructural arrangements take place at a critical Zr content that lead to the lowest resistive state of the MOS device.
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