Journal
MEASUREMENT
Volume 143, Issue -, Pages 1-10Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.measurement.2019.05.014
Keywords
Oven-controlled technology; Thermodynamic model; Silicon piezoresistive pressure sensor
Funding
- National Natural Science Foundation of China [61871363]
- Special Scientific Research Fund of Meteorological Public Welfare Profession of China [GYHY201006044]
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High precision is an important indicator for the silicon piezoresistive pressure sensor, which is deeply affected by the ambient temperature. This paper presented a chip-level oven-controlled system to operate the silicon piezoresistive pressure sensor at a constant temperature. However, the changes in ambient temperature still affect the temperature of the silicon piezoresistive pressure sensor due to the non-coplanar temperature control and the direct heat transfer between the piezoresistance on the surface of the pressure sensor and the environment. In order to decrease the effects and further improve the accuracy of the silicon piezoresistive sensor, a compensation function was introduced in the designed system. In addition, the oven-controlled structure fabricated by the MEMS process and the silicon piezoresistive pressure sensor were implemented at the chip level, which further reduced power consumption. The feasibility of the design was verified by the results of the thermodynamic model and COMSOL Multiphysics simulation analysis. Test results showed that when the pressure ranged from 100 hPa to 1100 hPa, the designed system performed a maximum measurement error no more than +/- 0.2 hPa from -45 degrees C to 45 degrees C. After compensation, the accuracy, sensitivity temperature coefficient, offset temperature coefficient of the silicon piezoresistive pressure sensor can reach 0.02% FS, 1.081 x 10 (5)/degrees C, 2.22 x 10 (4)% FS/degrees C respectively. (C) 2019 Elsevier Ltd. All rights reserved.
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