4.6 Article

Electronic and atomic structure studies of tin oxide layers using X-ray absorption near edge structure spectroscopy data modelling

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 99, Issue -, Pages 28-33

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2019.04.006

Keywords

Tin oxides; XANES; Linear combination; Nanolayer; First-principles calculation; Electronic structure

Funding

  1. Russian Science Foundation [17-72-10287]
  2. Ministry of Education and Science of Russia [16.8158.2017/8.9, 3.6263.2017/BY]
  3. Russian Science Foundation [17-72-10287] Funding Source: Russian Science Foundation

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The phase composition and local atomic and electronic structure of fin oxide layers have been studied by applying synchrotron X-ray absorption near edge structure spectroscopy. The linear combination analysis of the achieved results have been performed using first-principles calculated reference data for main fin-oxygen crystalline compounds. Our results suggest that proposed modelling approach successfully allows the reliable interpretation for Sn M-4,M-5 X-ray absorption near edge spectra caused by appropriate atomic structure reconstruction and phase transformation dynamics in thermally oxidized fin oxide layers produced by magnetron sputtering.

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