Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 100, Issue -, Pages 200-213Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2019.04.032
Keywords
ZnO thin films; Sputtering; XPS; Sheet resistance; Transmittance; Spectroscopic ellipsometry
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Funding
- University Grant Commission (UGC), New Delhi [7412-32-044]
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In the present work, tuning in optoelectronic properties of sputter deposited zinc oxide (ZnO) thin films on ITO coated glass substrate have been investigated as a function of annealing parameters. Although, the annealing treatment is needed to tune the optoelectronic properties of ZnO layer but it can also modify the electrical properties {a drastic change in sheet resistance (13 Omega/sq. to 23 ohm/sq.) was observed at an annealing temperature of 200 degrees C} of underlying ITO substrate, which restricted maximum annealing temperature to 200 degrees C for ZnO at ITO. Vertically standing array of ZnO nano-pipes having single crystal orientation (002) with hexagonal structure, large crystallite size (similar to 24 nm), lowest lattice strain (0.621%), highest surface roughness (similar to 16 nm), and lowest R-sh (12.3 K Omega/sq.) were obtained for sample annealed at 200 degrees C for 60 min. The XPS study also revealed that the sample annealed at 200 degrees C for 60 min contains lowest oxygen related vacancy (23.7), which favors the facile electrons transport when ZnO is used as an electron transport layer (ETL). SE and UV-Vis results revealed best optical parameters i.e., highest transmittance (T similar to 89%), refractive index (n = 1.98 at 480 nm), and band gap (E-g = 3.30 eV), for the sample annealed at 200 degrees C for 60 min. These results indicated that ZnO nano-pipes based ETL may be a promising candidate for low temperature, high mobility, and cost-effective optoelectronic devices.
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