A new L-T coupling mode to enhance the magnetoelectric effect of AlN/Fe-Ga device

To investigate the influence of the stress conduction mode on the voltage output of the magnetoelectric (ME) device, the structure of the traditional L-T type ME device was modified. The new L-T coupling mode has been mainly considered the two-phase interaction forces between ferroelectric and ferromagnetic materials not only have normal stress but also shear stress. As a comparison, the textured and polished silicon wafers were used as the substrates of the AlN/Fe-Ga ME devices. The AC magnetic field was applied along the length of the device, the voltage outputs of textured ME device were 10.29 mV, 9.92 mV, 20.53 mV higher than that of polished ME device at three non-resonant frequencies 513.37 Hz, 1.13 kHz, and 5.13 kHz, respectively. Compared with polished ME device under the same condition, the voltage outputs of textured ME device were enhanced significantly. (C) 2019 Elsevier B.V. All rights reserved.