4.5 Article

Electro-optical performance of liquid crystal device based on Al-doped SnO fabricated by sol-gel process

Journal

LIQUID CRYSTALS
Volume 47, Issue 3, Pages 345-351

Publisher

TAYLOR & FRANCIS LTD
DOI: 10.1080/02678292.2019.1647570

Keywords

Aluminum-doped tin oxide; annealing temperature; ion beam bombardment; liquid crystals

Funding

  1. National Research Foundation of Korea [2019-11-0042]

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We demonstrated uniform LC alignment on IB-irradiated aluminium tin oxide (AlSnO) by controlling the annealing temperature. Physico-chemical analyses were carried out to determine the surface modification and uniform LC alignment mechanism as a function of the annealing temperature. IB irradiation induced the breakdown of the chemical bonds of AlSnO, preserving its anisotropic characteristics along the direction of IB irradiation, allowing for uniform alignment of the LC molecules on the reformed surface. However, at annealing temperatures under the boiling point of the solvent, residual solvent remained on the surface, thereby prohibiting uniform LC alignment. Moreover, we obtained good optical transmittance in the visual region and good electro-optical performance. Therefore, the IB-irradiated AlSnO film annealed above 200 degrees C exhibited good potential as an alternative candidate for LC display applications. [GRAPHICS] .

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