Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 141, Issue 38, Pages 15145-15152Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jacs.9b06652
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- Samsung Advanced Institute of Technology (SALT)
- U.S. DOE Office of Science Facility [DE-SC0012704]
- Institute for Translational Medicine and Therapeutics (ITMAT)
- School of Engineering and Applied Science (SEAS)
- School of Arts and Sciences (SAS)
- Perelman School of Medicine (PSOM)
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The synthesis of colloidal III-V quantum dots (QDs), particularly of the arsenides and antimonides, has been limited by the lack of stable and available group V precursors. In this work, we exploit accessible InCl3- and pnictogen chloride-oleylamine as precursors to synthesize III-V QDs. Through coreduction reactions of the precursors, we achieve size- and stoichiometry-tunable binary InAs and InSb as well as ternary alloy InAs1-xSbx QDs. On the basis of structural, analytical, optical, and electrical characterization of the QDs and their thin-film assemblies, we study the effects of alloying on their particle formation and optoelectronic properties. We introduce a hydrazine-free hybrid ligand-exchange process to improve carrier transport in III-V QD thin films and realize InAs QD field-effect transistors with electron mobility > 5 cm(2)/(V s). We demonstrate that III-V QD thin films are promising candidate materials for infrared devices and show InAs1-xSbx QD photoconductors with superior shortwavelength infrared (SWIR) photoresponse than those of the binary QD devices.
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