Journal
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 52, Issue 49, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab3fc9
Keywords
domain wall; voltage-induced domain wall motion; synthetic antiferromagnet; gradient of magnetic anisotropy
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Funding
- National Natural Science Foundation of China [11574096]
- Huazhong University of Science and Technology [2017KFYXJJ037]
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Voltage-induced motion of a magnetic domain wall (DW) has potential in developing novel devices with ultralow dissipation. However, the speed for the voltage-induced DW motion (VIDWM) in a single ferromagnetic layer is usually very low. In this work, we proposed VIDWM with high speed in a synthetic antiferromaget (SAF). In the medium with a small damping coefficient, the velocity for the coupled DWs in the SAF is significantly higher than its counterpart in a single ferromagnetic layer. Strong interlayer antiferromagnetic exchange coupling plays a critical role for the high DW velocity since it inhibits the tilting of DW plane with Dzyaloshinskii-Moriya interaction. On the other hand, in the material with a large damping coefficient, the Walker breakdown of DW motion is also inhibited due to the stabilization of moment orientation under a strong interlayer antiferromagnetic coupling. In theory, the voltage-induced gradient of magnetic anisotropy is proved to be equal to an effective magnetic field that drives DW.
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