One-Dimensional/Two-Dimensional/Three-Dimensional Dual Heterostructure Based on MoS2-Modified ZnO-Heterojunction Diode with Silicon

Two-dimensional (2D) transition-metal dichalcogenides and their composites with metal oxides showed promising applications for visible-light responsive photocatalysis. In this work, we have synthesized optically tunable MoS2.ZnO heterostructure to cover the longer wavelength range in the visible-light region. The optical band gap tuning of the wide band gap ZnO from 3.23 to 2.91 eV is successfully achieved via chemical exfoliation and microwave-assisted synthesis route using MoS2 nanosheets. The synthetic heterostructured MoS2.ZnO was prepared to fabricate Si/MoS2.ZnO heterojunction diode, which exhibits diodelike characteristics with an excellent photoresponse behavior. A photoresponsivity of 212.2 mA/W, detectivity of 1.3 x 10(10) Jones, and response time of 200 ms was measured upon irradiation of 20 mW/cm(2) at a bias voltage of -2 V. The overall results show that they have potential for large area preparation of optoelectronic and photovoltaic devices.