Effect of boron doping concentration on structural optical electrical properties of nanostructured ZnO films

Zinc oxide (ZnO) and boron doped zinc oxide (ZnO:B) films were deposited on glass substrates heated up to 350 +/- 5 degrees C through ultrasonic spray pyrolysis (USP) method. Structural, optical and electrical properties of the films were characterized. X-ray diffraction (XRD) results showed that crystallization decreased as the concentration of B doping increased. TC (hkl) (texture coefficient) values of the films were calculated and it was determined that the preferred orientation of all the films was along the (002) plane. Scanning electron microscopy (SEM) images revealed that the film surfaces became rougher by increasing B doping. Optical properties of the films were determined by means of the transmittance and reflectance spectra taken by UV-vis spectrophotometer. B doping decreased optical band gaps of the films. Some foreign phases on the film surfaces were determined by means of Fourier transform infrared (FTIR) spectroscopy. Electrical resistance values of the films were determined by using current-voltage (I-V) change graphics and it was detected that B doping decreased resistance value of the ZnO film. (C) 2019 Elsevier B.V. All rights reserved.