Journal
JOURNAL OF CRYSTAL GROWTH
Volume 522, Issue -, Pages 30-36Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.jcrysgro.2019.06.016
Keywords
Nanomaterials; Semiconducting III-V materials; MOCVD; Infrared devices; Crystal structure; Antimonides
Funding
- Ministry of Science and Technology, Taiwan [MOST-108-3017-F-009-003]
- Center for the Semiconductor Technology Research from The Featured Areas Research Center Program within Ministry of Education (MOE) in Taiwan
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In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure from zincblende to wurtzite. Particularly, as group-V molar flow varies from 6.4 x 10(-5) to 8.0 x 10(-5) mol/min, wurtzite segment length of InSb NW increases from 16 +/- 9 nm to 89 +/- 9 nm, whereas zincblende crystal phase is observed for other molar flows. We interpret the observed phase transition to a lower surface energy of In-Sb alloy droplet than pure In-droplet, which makes triple phase line nucleation energetically favorable. This study gives insight on single growth parameter (V/III ratio) change to the InSb NW crystal control, such a technique is essential to selectively tune the crystal phase of single NW for various applications.
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