Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 802, Issue -, Pages 244-251Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2019.06.182
Keywords
Microwave-assisted Bi2O3; Hierarchical worm nanostructured films; Hydrogen gas sensors
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Funding
- Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) of the National Research Foundation of Korea - Ministry of Science, ICT & Future Planning [2013 M3A6B1078874]
- National Core Research Centre (NCRC) [2015M3A6B1065262]
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With a plausible reaction mechanism, a simple and rapid, microwave-assisted chemical synthesis method has been proposed to obtain hierarchical worm-like bismuth oxide (Bi2O3) nanostructured films as an efficient and effective hydrogen (H-2) gas sensors. The structural elucidation demonstrates a diffraction peak at 27.94 degrees for [201] directional growth with a lattice fringe distance of 0.31 nm. The Raman shift and photoelectron spectroscopy measurements, additionally, support the formation of the phase pure Bi2O3. Estimated 14.88 m(2)g(-1) specific surface area and 10-20 nm pore-size of as-obtained Bi2O3 evidences its mesoporous character. Among various gases tested, H-2 gas endows 50% sensing performance for hierarchical Bi2O3 worm-like film sensors with a considerable response of 42 s and recovery of 83 s for 100 ppm H-2 gas concentration at room-temperature, suggesting an importance of proposed method in obtaining the phase pure Bi2O3 film sensors. The H-2 gas sensing mechanism has been proposed on X-ray photoelectron spectroscopy results. Finally, an influence of a relative humidity on the Bi2O3 film sensor has demonstrated 32% response at 20% RH with response/recovery time of just 7/10 s, owing to its unique surface architecture, high surface area and mesoporous nature. (C) 2019 Published by Elsevier B.V.
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