Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 798, Issue -, Pages 12-18Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2019.05.236
Keywords
g-C3N4; Cu dopant; NiWO4; Z direct scheme; n-hexane removal
Ask authors/readers for more resources
We successfully used Cu to dope into the NiWO4 crystal to prevent the fast recombination or increase the lifetime of the photo-induced h(+) and e(-) of the material. Then, the synthesized Cu-NiWO4 was successfully hybridized with g-C3N4 to form Cu-NiWO4/g-C3N4 direct Z system for novel photocatalytic decomposition of n-hexane under vis-light. In the formed Cu-NiWO4/g-C3N4 Z direct system, photoinduced e(-) in Cu-NiWO4 CB associated with photo-induced h(+) in g-C3N4 VB maintaining e(-) in g-C3N4 CB and h(+) in Cu-NiWO4 VB, thereby synthesized photocatalysts formed abundant available e(-) and h(+) amounts even excited by vis-light and the formed e(-) and h(+) pairs exhibit suitable redox potentials for reactions with O-2 and H2O, respectively, to produce strong oxidative radicals for advanced photocatalytic degradation of n-hexane. The highest removal efficiency and degradation degree of n-hexane photocatalyzed by Cu-NiWO4/g-C3N4 were 96.8 and 96.3%, respectively. The synthesized Cu-NiWO4/g-C3N4 material also demonstrated strongly stability during long time n-hexane removal. (C) 2019 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available