Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 58, Issue 9, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/1347-4065/ab3844
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Funding
- National Natural Science Foundation of China [51431006, 51872099]
- Project for Guangdong Province Universities and Colleges Pearl River Scholar Funded Scheme
- Guangdong Innovative Research Team Program [2013C102]
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology [2017B030301007]
- 111 Project
- Innovation Project of Graduate School of South China Normal University [2018LKXM014]
- Challenge Cup Gold Seed Cultivation Project of South China Normal University [19HDKB03]
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The ferroelectric properties of 20 nm Hf0.5Zr0.5O2 (HZO) thin films has been investigated in a wide temperature range from 100 K to 450 K. The remnant polarization of HZO thin films decreases slightly from 24.6 mu C cm(-2) (100 K) to 17.9 mu C cm(-2) (450 K), indicating a robust temperature stability. The capacitors also exhibit excellent endurance properties up to 10(9) cycles at 100 K and 300 K, and their endurance cycles slightly degrades to 10(8) at an elevated temperature of 450 K. The results show that HZO ferroelectric thin films have great potential for future emerging memory applications in various harsh temperature environments. (C) 2019 The Japan Society of Applied Physics
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