Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 9, Pages 3756-3763Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2926781
Keywords
AlGaN/GaN HEMT; degradation; electrostatic discharge (ESD) behavior; power law; snapback instability
Funding
- Department of Science and Technology (DST), Government of India [DST/TSG/AMT/2015/294]
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This experimental study reports new aspects of electrostatic discharge (ESD) behavior in AlGaN/GaN HEMTs. The role of Schottky gate and MESA is investigated using special test structures. Influenceof piezoelectricfield, carrier trapping, and self-heating on ESD behavior is studied. A unique power-law-like behavior is found. Linear scaling of failure current with source-drain spacing is reported. Spot measured drain-to-source DC current is realized as an important parameter to monitor degradation. Unique degradation trends are observed for the first time and a correlation between snapback depth and % degradation is established. Cumulative nature of device degradation is discovered. Change from soft to hard failure with an increase in pulsewidth (PW) is reported. Finally, the cause of snapback instability observed in device, at low PW, is discussed.
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