Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 66, Issue 9, Pages 3835-3840Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2019.2930749
Keywords
Ferroelectric field-effect transistor (FeFET); film thickness; hafnium oxide (HfO2); large memory window (MW)
Funding
- European Fund for Regional Development EFRD
- Free State of Saxony, Europe supports Saxony
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Hafnium oxide (HfO2)-based ferroelectric field-effect transistor (FeFET) is an attractive device for nonvolatile memory. However, when compared to the well-established flash devices, the memory window (MW) of FeFETs reported so far is rather limited, which might be an obstacle to practical applications. In this article, we report on FeFETs fabricated in the 28-nm high-k metal gate (HKMG) bulk technology with 90 and 80 nm for the channel length and width, respectively, which show a large MW of nearly 3 V. This is achieved by adopting 20-nm-thick HfO2 films in the gate stack instead of the usually employed 10-nm-thick films. We show that such a thickness increase leads to only a moderate increase of the switching voltages, and to a significantly improved resilience of the memory characteristics upon the parasitic charge trapping. The devices display a good retention at high temperatures and endure more than 10(5) bipolar cycles, thus supporting this technology for a future generation of FeFET memories.
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