Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 25, Issue 5, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2019.2913727
Keywords
Photonic integrated circuits; electro-absorption modulators; high speed integrated circuits
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Funding
- European Commission through the Marie Curie GeTPICs Project under FP7-PEOPLE [317316]
- STW Project Next Generation Foundry Process Development [10019120]
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We report high speed electroabsorption modulators (EAMs), designed, fabricated and characterized within an open access generic foundry process. The EAM as a new building block is optimized in the existing platform, in which other BBs are established. By optimizing the EAM design layout, we show a static extinction ratio (static ER) of 18 dB, a low dc bias voltage below 1 V at an increased temperature, as well as operation in a semicooled environment, tested in the range of 20 degrees C -60 degrees C. Furthermore, we improve the intrinsic S-parameter response with a codesign circuit. The intrinsic 3-dB bandwidth of a 100-mu m-long EAM is 17 GHz. When measured with the EAM submount design, it is increased to 24 GHz. Simultaneously, the return loss bandwidth is improved by a factor of 2.5 staying below -10 dB up to 20 GHz. Through the realization of the EAM submount design we achieve a three-time speed increase of the existing platform, from previously offered 9 GHz (using an EAM) to 24 GHz shown in this paper.
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