Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 9, Pages 1475-1478Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2932382
Keywords
epsilon-Ga2O3; asymmetric schottky electrodes; detectivity; responsivity; solar-blind; MOCVD
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Funding
- National Natural Science Foundation of China [61821091, 61574169, 61574166]
- Ministry of Science and Technology of China [2018YFB0406504, 2016YFA0201803, 2017YFB0405603]
- Key Research Program of Frontier Sciences of the Chinese Academy of Sciences [QYZDB-SSW-JSC048, QYZDY-SSW-JSC001]
- Opening Project of the Key Laboratory of Microelectronics Devices and Integration Technology, Institute of Microelectronics of Chinese Academy of Sciences
- Structured Materials Industries Inc.
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In this letter we present a high performance epsilon-Ga2O3 solar-blind photodetector (SBPD) with asymmetric Schottky electrodes. The epsilon-Ga2O3 films were heteroepitaxially grown on c-plane sapphire by metal-organic chemical vapor deposition (MOCVD). The SBPDs were fabricated in the form of lateral interdigitated Schottky electrodes composed of a Pt/Ti/Au metal stack and a Ti/Au metal stack. The SBPD shows a rectification ratio of similar to 10(2) with low dark current of 25 pA at V = 6 V. A high photo-to-dark-current ratio of 5.7 x 10(4) under 254 nm light illumination was measured. Furthermore, the SBPD exhibits an ultrahigh detectivity and external quantum efficiency of 4.2 x 10(14) Jones and 4.1 x 10(4) %, respectively. Most importantly, the SBPD possesses an ultrahigh responsivity of 84 A/W with a fast response speed of 100 ms, suggesting the promise of epsilon-Ga2O3 in the future photodetector applications.
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