Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 8, Pages 1241-1244Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2921116
Keywords
beta-(Al0.22Ga0.78)(2)O-3; beta-Ga2O3; MODFETs; SiNx; passivation; field-plates
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Funding
- Department of Defense-Defense Threat Reduction Agency [HDTRA11710034]
- ONR EXEDE MURI Program [N00014-12-1-0976]
- OSU Institute for Materials Research Seed Program
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We investigate voltage breakdown of a beta-(Al0.22Ga0.78)(2)O-3/Ga2O3 modulation-doped field-effect transistor with a gate-connected field-plate and silicon nitride (SiNx) as the passivation layer. Breakdown characteristics were found to be limited by the Schottky gate. We demonstrate a high breakdown voltage of 1.37 kV for a gate-to-drain separation (L-GD) of 16 mu m with a specific ON-resistance of 120.1 m Omega.cm(2). A high average electric field of 3.9 MV/cm is extracted for LGD = 320 nm. The reported results suggest SiNx as a potential passivation dielectric for Ga2O3.
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