Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 9, Pages 1378-1381Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2928007
Keywords
Schottky diode; TiO2; anodization; high frequency
Categories
Funding
- Engineering and Physical Sciences Research Council (EPSRC) [EP/N021258/1]
- National Key Research and Development Program of China [2016YFA0301200]
- National Natural Science Foundation of China [11374185, 11304180]
- China Scholarship Council (CSC) [201706225077]
- EPSRC [EP/N021258/1] Funding Source: UKRI
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Thin-film Schottky diodes are one of the key elements in large-area flexible electronics. In such devices, a highly uniform semiconductor film is vital for the device performance. Here, we propose a novel solution-based anodization method to form a conformal oxide semiconductor layer for Schottky diodes. The thickness of the anodized TiO2 layer varied from 12 to 22.5 nm. The optimized Pt/TiO2/Ti Schottky diode demonstrated a large barrier height of 1.19 eV, an ON/OFF ratio as high as 3.5 x 10(6) at +/- 2 V, and an ideality factor of 1.5. The average breakdown electric field was 5.5 MV/cm, which is higher than typical values of conventional solution processed TiO2. The diode with a 15-nm-thick TiO2 layer also showed good rectification properties up to 0.7 MHz.
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