Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 9, Pages 1471-1474Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2929499
Keywords
Silicon photomultiplier; complementary metal oxide semiconductor (CMOS); shallow junction; device for brain positron emission tomography (PET)
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Funding
- Natural Science Foundation of China [61604059, 61425001, 61210003, 61601190, 61671215]
- Natural Science Foundation of Hubei Province [2016CFA005]
- National Key Scientific Instrument and Equipment Development Program of China [2013YQ030923]
- National Key Scientific Instrument and Equipment Development Program of Hubei Province [2013BEC050]
- National Key Research and Development Program of China [2016YFF0101500]
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We present a novel silicon photomultiplier based on a shallow junction obtained within a standard 0.35 mu m complementary metal oxide semiconductor process. The sensitive structure is equipped with a dedicated optical window as well as an optimized antireflective coating. The device exhibits performances comparable to custom-based commercial technologies: an unprecedented photon detection efficiency of 43% at 420 nm, a breakdown voltage temperature dependence of (27.9 +/- 0.9) mV/K, a dark count rate of 480 kHz/mm(2), a gain of 3 x 10(6), and a single photon time resolution of (78 +/- 2) ps (FWHM). The process proposed in this letter can be applied to new generation single photon sensors with on-chip integrated intelligent electronics.
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