Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 8, Pages 1321-1324Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2923420
Keywords
Boron vacancy; clustering model; dielectric breakdown; hexagonal boron nitride; ramp voltage stress
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Funding
- President Graduate Fellowship, Ministry of Education, Singapore
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Dielectric breakdown in 2D insulating films for future logic device technology is not well understood yet, in contrast to the extensive insight we have in the breakdown of bulk dielectric films, such as HfO2 and SiO2. In this letter, we investigate the stochastic nature of breakdown (BD) in hexagonal boron nitride (h-BN) films using ramp voltage stress and examine the BD trends as a function of stress polarity, area, and temperature. We present evidence that points to a non-Weibull distribution for h-BN BD and use the multi-scale physics-based simulations to extract the energetics of the defects that are precursors to BD, which happens to be boron vacancies.
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