Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 9, Pages 1407-1410Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2929240
Keywords
Memristor; electronic synapse; self-rectification; quasi-linear
Categories
Funding
- National Natural Science Foundation of China [61825404, 61732020, 61821091, 61604177, 61704191, 61804181]
- Strategic Priority Research Program of the Chinese Academy of Sciences [XDPB12]
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A memristor with a bilayer electrolyte structure (Pt/C/NbOx/TiN) is proposed as a self-rectification and quasi-linear electronic synapse. The device shows self-rectifying analogue memristive behavior with > 10(6) rectification ratio, which can solve the sneak current problem in crossbar array without additional hardware burden. Under identical pulses in potentiation process, the device conductance is quasi-linearly changed with 9.16% nonlinearity. In addition, the conductance change rate of device is effectively tuned by altering amplitudes and frequencies of spike pulses. Benefiting from the quasi-linear conductance change characteristics, excellent classification accuracy (95.7%) is achieved for the application of handwritten digit classification with a two-layer perceptron based on MINST stimulation.
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