Journal
FERROELECTRICS
Volume 547, Issue 1, Pages 97-104Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/00150193.2019.1592488
Keywords
Electromagnetic properties; first-principles; semi-metallic ferromagnetism
Funding
- National Natural Science Fund of China [61664008]
- Fundamental Capability Promotion Funds for Middle-aged and young teachers of Guangxi colleges and universities Project, China [2017KY0831]
- Special Research Funds for Discipline Construction of High Level University Project [2015SXTS02]
- Scientific and Technological Innovation Team [2017CXTD-01]
- project of production, learning and research cooperation [2017cxy05]
- Natural Science Foundation of Shaanxi province [2017JM6102]
- Scientific Research Funds of Guangxi Normal University for Nationalities [2016QN002]
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The electrical and magnetic properties of Mn-doped GaN were investigated by the density functional theory of spin polarization. The results indicate that Mn-doped GaN is still a direct bandgap semiconductor, and the bandgap width increases with the increase of Mn content. The N 2p and Mn 3d orbital were hybridized, which produce the spin polarization impurity bands, and the spin up the band to occupy the Fermi surface. The Ga1-xMnxN exhibits the semi-metallic ferromagnetism, which is suitable for spin injection. With the increase of Mn doping concentration, the semi-metallic properties of the system are enhanced. The studied results show that Mn-doped GaN can be applied as the ideal spin electronic material.
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